“For Wafer” Perpendicular Magnetic Layer Evaluation System “晶片”垂直磁层评估系统 | |
优势 | |
测量垂直磁层12英寸的晶圆 | |
规格 | |
主要功能 | Kerr Loop Measurement and Mapping Measurement (Polar Kerr Effect) |
光源 | Diode Laser |
探测光斑 | φ1mm (Typ.) |
磁场 | Max. ± 25Oe (2.5T) |
“For Wafer” In-Plane Magnetic Layer Evaluation System “晶片”平面磁层评估系统 | |
优势 | |
测量平面磁层12英寸的晶圆 | |
规格 | |
主要功能 | Kerr Loop Measurement and Mapping Measurement (Longitudinal Kerr Effect) |
光源 | Diode Laser |
探测光斑 | φ1mm (Typ.) |
磁场 | Max. ± 2kOe (0.2T) |
“For Hard Disc” Perpendicular Magnetic Recording Layer Evaluation System “硬盘”垂直磁记录层评估系统 | |
优势 | |
测量垂直磁性介质的2.5英寸和3.5英寸的硬盘 | |
规格 | |
主要功能 | Kerr Loop Measurement and Mapping Measurement (Polar Kerr Effect) |
光源 | Diode Laser |
探测光斑 | φ1mm (Typ.) |
磁场 | Max. ± 25kOe (2.5T) |
“For Hard Disc” Soft Under Layer (SUL) Evaluation System “硬盘”下软层评估系统 | |
优势 | |
测量软层下的2.5英寸和3.5英寸的硬盘 | |
规格 | |
主要功能 | Kerr Loop Measurement and Mapping Measurement (Longitudinal Kerr Effect) |
光源 | Diode Laser |
探测光斑 | φ1mm (Typ.) |
磁场 | Max. ± 3kOe (0.3T) |
