| 1 | 应用范围: | 研究半导体器件和半导体材料电学特性、精密测量半导体材料的载流子浓度、迁移率、电阻率、霍尔系数等重要参数 | |
| 2 | 规格: | ||
| 2-1 | Maximum sample size (Small board) - 15mm x15mm **样品尺寸:15mm x15mm (可定制) | ||
| 2-2 | Measurement Temperature: 300K (room temperature)， optional 77K. 测试温度: 室温、可选配液氮低温77K | ||
| 2-3 | Measurement Material: Semiconductors material such as Si， SiGe， SiC，GaAs， InGaAs， InP， GaN， ITO (N Type & P Type) 测试材质:半导体类材质、如： Si， SiGe， SiC， ZnO， GaAs， InGaAs， InP， GaN， ITO等所有半导体薄膜(P型和N型) | ||
| 2-4 | Magnet Flux Density: 0.68 Tesla nominal ±1% of marked value 磁场强度: 0.68 Tesla ±1% | ||
| 2-5 | Magbnet Stability: ±2% over 1 years 稳定性: ±2% （一年后） | ||
| 2-6 | Uniformity: ± 1% over 20mm diameter from center 均匀度：± 1%(20mm直径圆范围内) | ||
| 2-7 | Pole Gap: 20 mm 磁极间隙：20毫米 | ||
| 2-8 | Input voltage range: 1μV to 300V 输入电压范围：1μV ~300V | ||
| 2-9 | Hall voltage range: 10uV to 2000mV 霍尔电压范围: 10uV to 2000mV | ||
| 2-10 | Resistivity (Ohm.cm): 10-5 to 107 电阻率 (Ω.㎝): 10-5 to 107 | ||
| 2-11 | Mobility (cm2/Volt.sec): 1 ~ 107 迁移率(cm2/Volt.sec): 1 ~ 107 | ||
| 2-12 | Carrier Density (cm-3): 107 ~ 1021 载流子浓度(1/cm3): 107 ~ 1021 |
