1

波长范围

420~1000nm

2

Resolution

1 nm

3

膜厚测定范围

250 A- 20 um

4

膜厚测定精度

T=±5A, N=±0.02 based on SiO2 1100A standard wafer

5

膜厚测定重复性

SR Thickness repeatability: ≤ 1Å (1ơ) (at 1100Å, SiO2/Si)

6

测定光源

卤素灯泡(含 Constant Current Power Supply)

7

透明基板里面反射补正机能

包括透明基板背后反射的修正(软件)

8

测定SPOT径(Spot Size )

50 um Diameter ( 20 X Objective ) , can be smaller with less signal / noise ratio

9

Tact time

2S（测试1S+分析1S）